| PART |
Description |
Maker |
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| 2SC5161 |
High breakdown voltage.VCEO = 400V NPN silicon transistor
|
TY Semiconductor Co., Ltd
|
| NTE15049AC NTE15040-ECG NTE15048-ECG NTE15050AC NT |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC.
Surge arrester (gas filled). Nominal breakdown voltage 600VDC
Surge arrester (gas filled). Nominal breakdown voltage 230VDC
Surge arrester (gas filled). Nominal breakdown voltage 300VDC
Surge arrester (gas filled). Nominal breakdown voltage 90VDC
Surge arrester (gas filled). Nominal breakdown voltage 110VDC
Surge Arresters (Gas Filled) 避雷器（充气
Surge arrester (gas filled). Nominal breakdown voltage 350VDC
Surge arrester (gas filled). Nominal breakdown voltage 145VDC
Surge arrester (gas filled). Nominal breakdown voltage 470VDC
Surge arrester (gas filled). Nominal breakdown voltage 75VDC
Surge arrester (gas filled). Nominal breakdown voltage 120VAC.
|
NTE Electronics, Inc.
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3632-Z |
High voltage VCEO=600V High speed tf 0.5ìs Collector to base voltage VCBO 600 V
|
TY Semiconductor Co., Ltd
|
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
| BFN36 BFN38 Q62702-F1303 Q62702-F1246 |
From old datasheet system
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HDPE15U60G |
High breakdown voltage
|
SemiHow Co.,Ltd.
|
| HDS20U30GW |
High Breakdown Voltage
|
SemiHow Co.,Ltd.
|
| MMSTA92 |
High breakdown voltage
|
TY Semiconductor Co., Ltd
|
| 2SB1220 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
