| PART |
Description |
Maker |
| 2SA1252 |
High VEBO. Wide ASO and high durability against breakdown.
|
TY Semiconductor Co., Ltd
|
| 2SC3114 |
High-VEBO/AF Amp Applications
|
Sanyo Semicon Device
|
| 2SC4446 |
Very small-sized package High VEBO.Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
| KTC4527 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| KTC4527 KTC4527F |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA) 三重扩散NPN晶体管（高电压和RELLABILITY高速开关，级SOA
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING/ WIDE SOA)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| MC33181 MC33181D MC33181P MC34181 MC34184DTB MC331 |
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11500 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
Low Power, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers QUAD OP-AMP, 11000 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO14
(MC34182 / MC34184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
Dual Precision Timer 14-PDIP -40 to 85
(MC33181 - MC33184) Low Power / High Slew Rate / Wide Bandwidth / JFET Input Operational Amplifiers
|
http://
Motorola Mobility Holdings, Inc.
ON Semiconductor
Motorola, Inc.
|
| TSH340 TS613ID TSH93 TS613 TS613D TS616 TSH110 TSH |
DUAL WIDE BAND OPERATIONAL AMPLIFIER WITH HIGH OUTPUT CURRENT
High-speed operational amplifier evaluation board kit
|
STMICROELECTRONICS[STMicroelectronics]
|
| 1N1190 JANTXV1N3768R 1N1184 1N1184R 1N1186 1N1186R |
Standard Rectifier (trr more than 500ns)
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-SOIC -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AB
Single Wide-Bandwidth High-Output Drive Single-Supply Op Amp With Shutdown 8-SOIC 0 to 70 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 20-HTSSOP -40 to 125 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
|
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| ASI10615 HF250-50 |
NPN Silicon RF Power Transistor(Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:40 A,Vcbo: 110 V,Vceo: 55V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
|
