| PART |
Description |
Maker |
| HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| HY5DU12822DTP-D43 HY5DU12822DLTP-D43 HY5DU12822DLT |
32M X 16 DDR DRAM, 0.75 ns, PDSO66
64M X 8 DDR DRAM, 0.75 ns, PDSO66
512Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
| H5TQ1G63BFR-PBC |
64M X 16 DDR DRAM, 20 ns, PBGA96
|
HYNIX SEMICONDUCTOR INC
|
| H5MS1G62MFP-L3M |
64M X 16 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| H5PS1G63EFR-C4I H5PS1G63EFR-S5C |
64M X 16 DDR DRAM, 0.5 ns, PBGA84
64M X 16 DDR DRAM, 0.4 ns, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| IDSH1G-04A1F1C-10E |
64M X 16 DDR DRAM, PBGA96
|
QIMONDA AG
|
| HY5DU56422DF-D4 |
64M X 4 DDR DRAM, 0.65 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| WV3HG64M32EEU534D4ISG WV3HG64M32EEU403D4IMG |
64M X 32 DDR DRAM MODULE, 0.5 ns, ZMA200
64M X 32 DDR DRAM MODULE, 0.6 ns, ZMA200
|
MICROSEMI CORP-PMG MICROELECTRONICS
WHITE ELECTRONIC DESIGNS CORP
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| NT512D72S8PABG-75T |
64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Nanya Technology, Corp.
|
|
