| PART |
Description |
Maker |
| 2N4092 2N4091 2N4093 JAN2N4091 JAN2N4092 JAN2N4093 |
N Channel MOSFET
N-CHANNEL J-FET Qualified per MIL-PRF-19500/431
|
MICROSEMI[Microsemi Corporation]
|
| JAN2N6764 JAN2N6766 JAN2N6770 JANTXV2N6764 JANTXV2 |
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
|
Microsemi Corporation
|
| IRF7309ITRPBF IRF7309IPBF |
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market
|
International Rectifier
|
| DMN6070SFCL-15 DMN6070SFCL-7 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Qualified to AEC-Q101 standards for High Reliability
|
Diodes Incorporated
|
| DMG7408SFG-7 DMG7408SFG-13 DMG7408SFG-15 DMG7408SF |
30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI?
Qualified to AEC-Q101 Standards for High Reliability
|
Diodes Incorporated
|
| NE23383B |
SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET (SPACE QUALIFIED)
|
NEC[NEC]
|
| FDS6961AZ FDS6961AZL86Z FDS6961AZL99Z |
3.5 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SO-8
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
Dual N-Channel Logic Level PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| RN55D4170FB14 RN55E1002BR36 |
RESISTOR, METAL FILM, 0.125 W, 1 %, 100 ppm, 417 ohm, THROUGH HOLE MOUNT AXIAL LEADED
Metal Film Resistors, Military, MIL-R-10509 Qualified, Precision, Type RN and MIL-PRF-22684 Qualified, Type RL
|
Vishay Siliconix
|
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR
Rugged Series Power MOSFETs - N-Channel
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6.8AI（四）|47
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5.4AI（四）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 4A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 2.25AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 1.35AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp.
Intersil, Corp.
Infineon Technologies AG
Fairchild Semiconductor, Corp.
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| IXTL15N20 IXTL8P40 IXTL5N65 IXTL5P40 IXTL6N60 IXTM |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 8A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-204AC
TRANSISTOR | MOSFET | N-CHANNEL | 950V V(BR)DSS | 5A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 10A I(D) | TO-254 晶体管| MOSFET的| P通道| 200伏五（巴西）直| 10A条（丁）|254
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 5A I(D) | TO-254 晶体管| MOSFET的| N沟道|650V五（巴西）直| 5A条（丁）|54
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 7A I(D) | TO-3 晶体管| MOSFET的| P通道| 150伏五（巴西）直| 7A条（丁）|
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-210AC 晶体管| MOSFET的| N沟道| 500V五（巴西）直|3A条（丁）|10AC
TRANSISTOR | MOSFET | P-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-220 晶体管| MOSFET的| P通道| 500V五（巴西）直| 5A条（丁）|220
|
MITSUMI ELECTRIC CO., LTD.
Infineon Technologies AG
HIROSE ELECTRIC Co., Ltd.
|
| AM29C116-1/BUA AM29C116/BUA AM29C116-2PC AM29C116- |
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a 18-pin LCC package; A IRHE9130 with Standard Packaging
Hi-Rel Adjustable Voltage 3-Terminal Negative Regulator; A OM1323N2M with Standard Packaging
Hi-Rel Adjustable Voltage 3-Terminal Positive Regulator; A OM1324SMM with Standard Packaging
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA7160 with Standard Packaging
Hi-Rel Adjustable Voltage 3-Terminal Positive Regulator; A OM1321NKM with Standard Packaging
Hi-Rel Adjustable Voltage 3-Terminal Negative Regulator; A OM1322NKM with Standard Packaging
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-3 package; A IRHNB7264SE with Standard Packaging
16-Bit Microprocessor 16位微处理
60V Hi-Rel Synchronous Rectifier N-Channel MOSFET in a SMD-2 package; A IRHSNA57064 with Standard Packaging 16位微处理
Hi-Rel Adjustable Voltage 3-Terminal Positive Regulator; Qualified Part Number similar to OM1320N2M 16位微处理
Hi-Rel Adjustable Voltage 3-Terminal Negative Regulator; A OM1325SMM with Standard Packaging 16位微处理
|
16位微控制
AverLogic Technologies, Corp.
GC Electronics
Amphenol, Corp.
|
