| PART |
Description |
Maker |
| MGF0909A11 |
High-power GaAs FET(small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF1601B MGF1601B11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0953P11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
Fujitsu Media Devices Limited
|
| NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| FLL21E090IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
| FLL21E135IX |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL21E045IY |
L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL410IK-3C |
L-Band High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL810IQ-3C |
L-BAND HIGH POWER GAAS FET
|
Eudyna Devices Inc
|
