PART |
Description |
Maker |
VSKH250-08PBF VSKL250-16 SKT250-04PBF SKT250-08PBF |
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 Silicon Controlled Rectifier, 555 A, 1600 V, SCR, MAGN-A-PAK-5 Silicon Controlled Rectifier, 555 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 555 A, 1000 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 377 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 Silicon Controlled Rectifier, 377 A, 1200 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
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Vishay Semiconductors Vishay Siliconix
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2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6 |
Silicon Controlled Rectifier 16A 400V Darlington Transistors NPN Silicon Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS
|
ONSEMI[ON Semiconductor]
|
70C80B 70C50B 70C120B 70C60B 70C100B 70C 70C80BF 7 |
Silicon Controlled Rectifier 3-Pin Microprocessor Reset Circuits Silicon Controlled Rectifier 110 A, SCR, TO-208AD
|
MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V. 10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State ETC[ETC]
|
2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V. 12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State GE[General Semiconductor] GE Security, Inc.
|
IRKL41-06 IRKL41-08 IRKL41-14 |
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 800 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
|
Vishay Semiconductors
|
X0405BE X0403ME |
SILICON CONTROLLED RECTIFIER,200V V(DRM),4A I(T),TO-202 SILICON CONTROLLED RECTIFIER,600V V(DRM),2.4A I(T),TO-202 From old datasheet system
|
ST Microelectronics
|
BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A. Silicon Controlled Rectifiers Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92 Silicon Controlled Rectifier .8A 25V Thyristor .8A 200V Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
TYN1004 TYN804 |
V(drm): 1000V; silicon controlled rectifier (SCR) V(drm): 800V; silicon controlled rectifier (SCR)
|
SGS Thomson Microelectronics
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