| PART |
Description |
Maker |
| 1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| MA4ST550 MA4ST551 MA4ST552 MA4ST553 MA4ST554 MA4ST |
L-KU BAND, 2.7 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
High Q Hyperabrupt Tuning Varactors
L-KU BAND, 1.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MACOM[Tyco Electronics]
|
| V27D V27BCO V27CCO V27E V27ECCO V27ACO V27EACO V12 |
27 pF, 22 V, SILICON, VARIABLE CAPACITANCE DIODE
27 pF, 72 V, SILICON, VARIABLE CAPACITANCE DIODE
12 pF, 110 V, SILICON, VARIABLE CAPACITANCE DIODE
10 pF, 70 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
| BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
From old datasheet system
|
NXP Semiconductors
Philipss
|
| 1N5455 1N5446B 1N5465A 1N5470A 1N5475C 1N5443A 1N5 |
82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
MICROSEMI CORP-LOWELL
|
| GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM
C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| MA2C346 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2S377 |
Silicon epitaxial planar type UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2S304 |
Silicon epitaxial planar type VHF BAND, 27.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| ADVANCEDSEMICONDUCTORINC-AT902001 AT3000A AT3000A2 |
X BAND, 0.4 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 0.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.4 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 3.9 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
L-S BAND, 3.3 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
S-C BAND, 2.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF BAND, 27 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
ADVANCED SEMICONDUCTOR INC
|
| BB142 BB142115 |
4.6 pF, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
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