| PART |
Description |
Maker |
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S |
Silicon Carbide Schottky Diodes - 2x10A diode in TO263 package
Silicon Carbide Schottky Diodes - 2x10A diode in TO220-3 package
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| MBRS330T3 MBRS360T3 |
surface Mount Schottky Power Rectifie
|
TY Semiconductor Co., Ltd
|
| GB840 |
SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 8A RECTIFIE
|
GTM CORPORATION
|
| KBP206 KBP208 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIE
|
Yea Shin Technology Co., Ltd
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SML100M12MSF SML010FBDH06 SML10SIC06YC SML05SC06D3 |
Silicon Carbide Power
|
Seme LAB
|
| NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| C3D02065 C3D02065E |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| C3D25170H |
Silicon Carbide Schottky Diode
|
Cree
|
| C3D06065A |
Silicon Carbide Schottky Diode
|
Cree
|
|
