| PART |
Description |
Maker |
| BUV22_D ON0258 BUV22 |
SITCHMODE Series NPN Silicon Power Transistor
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS
|
ON Semiconductor
Motorola, Inc
|
| MJF47 |
Bipolar Power TO220FP NPN 1A 250V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 1 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
ON Semiconductor
|
| BUL53B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 12 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
TT electronics Semelab, Ltd.
|
| BUV62 BUV6209 BUV62.MOD |
FAST SWITCHING NPN POWER TRANSISTOR
40 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AE
|
Seme LAB
SEMELAB LTD
|
| 2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE.
For Low Frequency Power Amplify Application Silicon NPN Epitaxial Planar type
|
ISAHAYA[Isahaya Electronics Corporation]
N.A.
|
| MJF47 |
NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS
|
MOTOROLA[Motorola, Inc]
|
| BUP53 BUP52 BUP53.MODR1 |
60 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AE HERMETIC SEALED, METAL, TO-3, 2 PIN
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| BUT34 |
50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS
|
Motorola Inc
Motorola, Inc.
|
| 2N2760 2N2761 2N2822 |
30 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-63
30 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-63
25 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-63
|
|
| STPS5L25B-TR STPS5L25 |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
LOW DROP POWER SCHOTTKY RECTIFIER
|
STMicroelectronics
ST Microelectronics
|
|
