| PART |
Description |
Maker |
| HUF75332S3S HUF75332G3 HUF75332P3 |
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N沟道,UltraFET功率MOS场效应管)
|
Intersil Corporation
|
| HUF76432P3 HUF76432S3S |
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| STD40NF02L STD40NF02LT4 |
20 A, 20 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-CHANNEL 20V - 0.0095 OHM - 40A DPAK LOW GATE CHARGE STRIPFET POWER MOSFET
|
STMICROELECTRONICS
ST Microelectronics
|
| WP-MKT4-173250-S WP-MKT4 WP-MKT4-173225-D WP-MKT4- |
MOSFET DUAL N-CHAN 20V SOT-323 窄带调频甚高频发射模
MOSFET N-CHAN DUAL 200MW SOT-363
MOSFET N-CHAN 50V 350MW SOT-23
MOSFET DUAL N-CHAN 50V SOT-26
FM Narrow Band VHF Transmitter Module
|
Electronic Theatre Controls, Inc.
Wireless Products
ETC[ETC]
List of Unclassifed Manufacturers
|
| STD25NE03L 6462 |
N - CHANNEL 30V - 0.019 Ohms - 25A - TO-251/TO-252 STripFET POWER MOSFET
N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET
N - CHANNEL 30V - 0.019 - 25A - TO-251/TO-252 STripFET TM POWER MOSFET
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT30M19JV APT30M19JVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 300V 130A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M19JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 112A 0.019 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| HUFA76432S3S HUFA76432P3 HUFA76432S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 55A条（丁）|63AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| MS235RAA19NGSN |
1 ELEMENT, 0.019 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
COILCRAFT INC
|
