PART |
Description |
Maker |
BS108B |
230 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
DIODES INC
|
SUP80N15-20L 72425 |
N-Channel 150-V (D-S) 175C MOSFET N-Channel 150-V (D-S) 175∑C MOSFET N-Channel 150-V (D-S) 175隆?C MOSFET N-Channel 150-V (D-S) 175°C MOSFET
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
IXTA230N075T2-7 |
230 A, 75 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
IXYS CORP
|
IXFH230N10T |
230 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS CORP
|
MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
STI16N65M5 STU16N65M5 STP16N65M5 STF16N65M5 |
N-channel 650 V, 0.230 Ω, 12 A MDmesh V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 N-channel 650 V, 0.230 Ω, 12 A MDmesh?/a> V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 N-channel 650 V, 0.230 Ω, 12 A MDmesh?V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247
|
STMicroelectronics
|
SUM23N15-73 |
N-Channel 150-V (D-S) 175C MOSFET N-Channel 150-V (D-S) 175 C MOSFET
|
VISAY[Vishay Siliconix]
|
SEMIX151GAR12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
XC3190-4PQ160I XC3190-4PQ208I XC3142-3TQ144C XC314 |
FPGA, 320 CLBS, 5000 GATES, 230 MHz, PQFP160 FPGA, 320 CLBS, 5000 GATES, 230 MHz, PQFP208 FPGA, 144 CLBS, 3000 GATES, 270 MHz, PQFP144 FPGA, 144 CLBS, 3000 GATES, 230 MHz, PQFP100
|
XILINX INC
|
CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8 80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5 True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial 80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp. CENTRAL SEMICONDUCTOR CORP
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