PART |
Description |
Maker |
S29AL016J55TFIR10 S29AL016J55FFIR20 S29AL016J55TFI |
1M X 16 FLASH 3V PROM, 55 ns, PDSO48 LEAD FREE, MO-142DDD, TSOP-48 1M X 16 FLASH 3V PROM, 55 ns, PBGA64 1M X 16 FLASH 3V PROM, 55 ns, PBGA48 1M X 16 FLASH 3V PROM, 55 ns, PDSO56
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Spansion, Inc. SPANSION LLC
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AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT |
128K X 8 FLASH 12V PROM, 150 ns, PDIP32 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32 x8 Flash EEPROM x8闪存EEPROM 1 Megabit CMOS Boot Block Flash Memory
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Ironwood Electronics Atmel, Corp. Rectron Semiconductor http://
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S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
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Spansion, Inc. SPANSION LLC
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PA28F008SC-90 E28F008SC-150 PA28F008SC-170 |
1M X 8 FLASH 3.3V PROM, 90 ns, PDSO44 13.30 X 28.20 MM, PLASTIC, SOP-44 1M X 8 FLASH 3.3V PROM, 150 ns, PDSO40 1M X 8 FLASH 3.3V PROM, 170 ns, PDSO44
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Intel, Corp. INTEL CORP
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S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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Spansion Inc. Advanced Micro Devices, Inc. Spansion, Inc. http://
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M29F200FB55N6F2 M29F800FB55N3F2 M29F800FB55N3S2 M2 |
128K X 16 FLASH 5V PROM, 55 ns, PDSO48 512K X 16 FLASH 5V PROM, 55 ns, PDSO48 1M X 16 FLASH 5V PROM, 55 ns, PDSO48 128K X 16 FLASH 5V PROM, 55 ns, PDSO44 256K X 16 FLASH 5V PROM, 55 ns, PDSO48
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NUMONYX
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AT49BV8192A-15TC AT49BV8192A-15TI AT49BV8192A-20CC |
LM431 Adjustable Precision Zener Shunt Regulator; Package: SOT-23; No of Pins: 3 512K X 16 FLASH 3V PROM, 120 ns, PDSO40 8-Megabit 1M x 8/ 512K x 16 CMOS Flash Memory 1M X 8 FLASH 5V PROM, 200 ns, PDSO48
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ATMEL[ATMEL Corporation] Atmel, Corp.
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NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16 16M X 8 FLASH 3V PROM, PBGA24 128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
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Numonyx B.V
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AM29LV160DB-90WCC AM29LV160DB-70WCC AM29LV160DT-70 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 29LV160BB 16MBIT FLASH 3V TSOP-48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 120 ns, PDSO44 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 120 ns, PBGA48 IC SM FLASH 1MX16 120NS 3.3V 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
HY29LV160TT-12 HY29LV160TF-12 HY29LV160TT-70 HY29L |
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory 1M X 16 FLASH 2.7V PROM, 80 ns, PBGA48 Circular Connector; No. of Contacts:55; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-55
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http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
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