| PART |
Description |
Maker |
| M27C400206 M27C4002-90XN6TR M27C4002 M27C4002-10B1 |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
256K X 16 UVPROM, 70 ns, CDIP40
256K X 16 OTPROM, 150 ns, PQCC44
256K X 16 OTPROM, 200 ns, PDIP40
256K X 16 UVPROM, 150 ns, CDIP40
256K X 16 OTPROM, 120 ns, PQCC44
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27W801-100F6TR |
1M X 8 UVPROM, 100 ns, CDIP32
|
STMICROELECTRONICS
|
| AM27C010-105DC |
128K X 8 UVPROM, 100 ns, CDIP32
|
ADVANCED MICRO DEVICES INC
|
| M29W400B-100M5 STMICROELECTRONICS-M29W400T-120ZA1T |
256K X 16 FLASH 2.7V PROM, 100 ns, PDSO44
512K X 8 FLASH 2.7V PROM, 100 ns, PBGA48
256K X 16 FLASH 2.7V PROM, 100 ns, PDSO48
256K X 16 FLASH 2.7V PROM, 150 ns, PDSO48
256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
256K X 16 FLASH 2.7V PROM, 150 ns, PDSO44
|
STMICROELECTRONICS
|
| AM2716B-150/BJA AM2716B-205DC |
2K X 8 UVPROM, 150 ns, CDIP24
2K X 8 UVPROM, 200 ns, CDIP24
|
ADVANCED MICRO DEVICES INC
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS880E32AT-250 |
512K x 18, 256K x 32, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO
From old datasheet system
Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
|
| IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
| 5962-87515103A CY7C261-55JCR CY7C261-55JI CY7C261- |
8K X 8 UVPROM, 55 ns, CQCC28
8K X 8 OTPROM, 55 ns, PQCC28
8K X 8 UVPROM, 20 ns, CDIP24
8K X 8 OTPROM, 55 ns, CQCC28
|
CYPRESS SEMICONDUCTOR CORP
|
| GS72108TP-8I GS72108J-10 GS72108J-10I GS72108J-12 |
256K X 8 STANDARD SRAM, 12 ns, PDSO44
256K X 8 STANDARD SRAM, 10 ns, PDSO44
TV 4C 4#12 SKT RECP 256K × 8Mb异步SRAM
256K x 8 2Mb Asynchronous SRAM 256K × 82Mb异步SRAM
TV 15C 14#20 1#16 SKT RECP 256K × 8Mb异步SRAM
256K X 8 STANDARD SRAM, 10 ns, PDSO36 0.400 INCH, SOJ-36
TV 5C 5#16 PIN RECP 256K × 8Mb异步SRAM
256K X 8 STANDARD SRAM, 8 ns, PDSO36 0.400 INCH, SOJ-36
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:37; Connector Shell Size:15; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 256K × 8Mb异步SRAM
|
ETC
GSI Technology, Inc.
Electronic Theatre Controls, Inc.
GSI[GSI Technology]
|
|
