| PART |
Description |
Maker |
| PH1920-90 |
Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-98 无线功率晶体90瓦，1930-1990兆赫
Wireless Power Transistor 90 Watts 1930-1990 MHz
Wireless Power Transistor 90 Watts, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| AGR19045EF |
45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| MADCSM0001TR MADCSM0001 MADCSM0001SMB |
Dual-Band/Triple-Mode Downconverter 869 - 893 MHz and 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| 1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920AB25 |
25 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| MHL19926 |
MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier
|
Motorola
|
| 1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
Micrel Semiconductor, Inc.
|
| PTFB192503EL PTFB192503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| PTF191601E PTF191601F |
Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz
|
Infineon Technologies A...
|
| MRF5S19150H MRF5S19130HR306 MRF5S19130HSR3 MRF5S19 |
RF Power Field Effect Transistors
MRF5S19130HSR3 1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
