| PART |
Description |
Maker |
| ACT2016SMX-4 |
extremely compact, high quality, low aging, seam welded crystal
|
Advanced Crystal Technology
|
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| CZTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
Central Semiconductor Corp
|
| CES2307 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDC608PZ |
High performance trench technology for extremely low RDS
|
TY Semiconductor Co., Ltd
|
| CES2313A |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| CES2305 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AP2122 AP2122AK-3.3TRE1 AP2122AK-1.5TRE1 AP2122AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
