| PART |
Description |
Maker |
| RJK03C5DPA |
Built in SBD N Channel Power MOS FET
|
Renesas
|
| RJK0213DPA-00-J5A RJK0213DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MCH5823 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| PT2390 PT2390-S |
Echo IC with Built in Michrophone Amplifier and Output Mixer
Echo IC with Built-in Microphone Amplifier & Output Mixer
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3711Z with Lead Free Packaging
|
Princeton Technology Co...
Princeton Technology Corporation
PTC
|
| PU7457 |
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
|
Panasonic Semiconductor
|
| MB40568 MB40568PF MB40568P-SK |
A/D Converter (1-channel, 8-bit low-power model with built-in clamp circuit)
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| R3130N04 R3131N R3131N18EA-TR-FB |
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
Low Voltage Detector with Built-in Delay Circuit
|
RICOH COMPANY LTD
RICOH electronics devices division
|
| SF15SC4 |
Schottky Rectifiers (SBD) / Center Tap, Common Cathode (Three Terminal Type)
SCHOTTKY RECTIFIER (SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| MCH5809 |
Nch SBD
N-Channel Silicon MOSFET DC / DC Converter Applications
|
Sanyo Semicon Device
|
| SMA4032 |
3 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
SANKEN[Sanken electric]
|
| SLA4041 |
3 A, 200 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
NPN Darlington With built-in flywheel diode
|
Sanken electric
|
