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TP0616N3P001 - 400 mA, 160 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

TP0616N3P001_6854882.PDF Datasheet


 Full text search : 400 mA, 160 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
 Product Description search : 400 mA, 160 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92


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Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.7 to 8.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.9 to 8.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.3 to 8.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
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Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 长途电容式接近传感
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Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.9 to 7.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 低电压,5ヘ,4通道2端口NanoSwitch
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