| PART |
Description |
Maker |
| CCR1 CCR CCR1Z-1K2KI CCR1Z-1K8KI CCR1Z-1K5KI CCR1Z |
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 390 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 270 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 560 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2200 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 680 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 820 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 10000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2700 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 3300 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 220 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 330 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 470 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 22000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 12000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 18000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 15000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1500 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1800 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1200 ohm, SURFACE MOUNT
Carbon Ceramic Resistors
|
Welwyn Components, Ltd.
Welwyn Components Limited
TT Electronics / Welwyn
|
| STH5NA90FI |
3.5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
STMICROELECTRONICS
|
| IPW90R120C3 |
36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| RFL1N15L RFL1N12L |
1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs
1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| STP12IE90F4 P12IE90F4 |
Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| 2SK261009 2SK2610 |
5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Chopper Regulator, DC−DC Converter and Motor Drive Applications
|
Toshiba Semiconductor
|
| TMP93PW44A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW46A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| MUR1100E MUR190E ON2734 |
1 A, 900 V, SILICON, SIGNAL DIODE
ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| IXFT16N90Q IXFH16N90Q IXFK16N90Q |
HiPerFET Power MOSFETs Q-Class 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 2SK2664 |
3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFETs / HVX-II Series (Three Terminal Type)
|
Shindengen
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
|
