PART |
Description |
Maker |
JDH2S01T |
UHF Band Mixer Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
JDP2S01S |
UHF~VHF Band RF Attenuator Applications 甚高频波段超高频射频衰减器的应用 Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HVV0405-175-EK |
UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
|
HVVi Semiconductors, Inc.
|
BFG198TRL BFQ18ATRL BFT92AW |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR
|
NXP SEMICONDUCTORS
|
EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应 NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd. Sanyo Semicon Device
|
BLW34 |
UHF Linear power transistor(UHF 线性功率晶体管) UHF BAND, Si, NPN, RF POWER TRANSISTOR UHF Linear power transistor(UHF 线性功率晶体管)
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
1N5472A 1N5466C TX-1N5469C TX-1N5468B TX-1N5446C 1 |
VHF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 8.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
BLT50_CNV_2 BLT50 BLT50-T |
UHF BAND, Si, NPN, RF POWER TRANSISTOR UHF power transistor From old datasheet system
|
NXP Semiconductors N.V.
|
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