PART |
Description |
Maker |
IXGT60N60 IXGH60N60 IXGK60N60 |
Ultra-Low VCE(sat) IGBT IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
http:// IXYS[IXYS Corporation]
|
PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V. Philips Semiconductors
|
PBSS4350SPN PBSS4350SPN115 PBSS4350SPN-15 |
50 V, 2.7 A NPN-PNP low VCEsat (BISS) transistor 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
SGF23N60UFD SGF23N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 23 A, 600 V, N-CHANNEL IGBT Ultra-Fast IGBT Discrete, High Performance IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
BUP202 Q67078-A4401-A2 BUP202SMD |
IGBT Transistor From old datasheet system IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) 12 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
Q67078-A4402-A2 BUP203 BUP203SMD |
IGBT Transistor From old datasheet system IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 21 A, 1000 V, N-CHANNEL IGBT, TO-220
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
IRG7PH35UD1-EP |
1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
|
International Rectifier
|
2PD2150 |
20 V, 3 A NPN low VCEsat transistor 20 V, 3 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors Philips Semiconductors
|
IRG4BC30UDPBF IRG4BC30UDPBF-15 |
23 A, 600 V, N-CHANNEL IGBT, TO-220AB ULTRA FAST COPACK IGBT
|
International Rectifier
|
SGP13N60UFD SGP13N60UFDTU |
Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
|
Fairchild Semiconductor
|
SGW6N60UFD SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|