| PART |
Description |
Maker |
| MA45851 |
SILICON ABRUPT TUNING VARACTOR DIODE 1.2 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
Advanced Semiconductor, Inc.
|
| MV2101ZL1 MV2104RLRB MV2105RLRB MV2108RLRB MV2111R |
HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
HF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE PLASTIC, CASE 182-02, TO-226AC, 2 PIN
|
Motorola Mobility Holdings, Inc.
|
| AT12017-21 |
SILICON ABRUPT VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| 1N5474A 1N5470B 1N5446B |
68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| MA45334 |
SILICON ABRUPT TUNING VARACTOR DIODE
|
ASI[Advanced Semiconductor]
|
| TX-GC1513-36 TX-GC1513-35 GC1513-88 TX-GC1513-85 |
X BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| DH71012 DH72150 DH72100 DH72270 DH72006 DH72025 |
KU BAND, 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 15 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 10 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 27 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 0.6 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
X BAND, 2.5 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
TEMEX COMPONENTS
|
| DH71100-70T10 |
HF-S BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
TEMEX COMPONENTS
|
| GVD91302-011 |
VHF-C BAND, 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
SPRAGUE-GOODMAN ELECTRONICS INC
|
| MV1636BCHIP 1N5446BCHIP 1N5461BCHIP 1N5470C 1N5446 |
VHF-UHF BAND, 27 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
|
