| PART |
Description |
Maker |
| 4802.2220 |
12V, 1A, 3.7mm DIAMETER, DC POWER PLUG OR JACK
|
SCHURTER INC
|
| 19-09-1091 |
.093 Diameter Connectors.093 Diameter Connector Housings With Mounting Ears & Detent, Panel Mount9 Receptacle 9 CONTACT(S), FEMALE, POWER CONNECTOR
|
Molex, Inc.
|
| M38747M4T-XXXFS M38747M4T-XXXGP M38748E4T-XXXFS M3 |
DCM37PP
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-SOIC 0 to 70
Quad 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 16-SOIC -40 to 85
Quad 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 16-SOIC 0 to 70
Single 2.7-V High Slew Rate Rail-to-Rail Output Operational Amplifier 8-SOIC 0 to 70
Single 2.7-V High Slew Rate Rail-to-Rail Output Operational Amplifier 5-SOT-23 0 to 70
BATTERY, SILVER OXIDE, V317; Voltage, output:1.5V; Capacity, energy storage:12.5mAh; Technology, Battery:Silver Oxide; Length / Height, external:1.7mm; Diameter, body:5.8mm; Battery size code:Button; Weight:0.18g RoHS Compliant: NA
BATTERY, SILVER OXIDE, V315; Voltage, output:1.5V; Capacity, energy storage:21mAh; Technology, Battery:Silver Oxide; Length / Height, external:1.6mm; Diameter, body:7.9mm; Battery size code:Button; Weight:0.33g RoHS Compliant: NA
BATTERY, SILVER OXIDE, V319; Voltage, output:1.5V; Capacity, energy storage:18mAh; Technology, Battery:Silver Oxide; Length / Height, external:2.7mm; Diameter, body:5.8mm; Battery size code:Button; Weight:0.31g RoHS Compliant: NA
Global Limit Switches Series GLS: Wobble - Coil Spring, 2NC Slow Action, 20 mm
CABLE FLAT FLEX 16POS 1MM 2,1
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-SOIC -40 to 125
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-MSOP -40 to 125
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-PDIP -40 to 125
Single 2.7-V High-Slew-Rate Rail-to-Rail Output Operational Amplifier w/Shutdown 8-PDIP 0 to 70
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
192280030 单芯位CMOS微机
Dual 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 14-SOIC -40 to 85 单芯位CMOS微机
Dual 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 10-MSOP -40 to 85 单芯位CMOS微机
Quad 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier 14-SOIC 0 to 70 单芯位CMOS微机
Quad 1.8-V, Micro-power, Rail-to-Rail, Single Supply Amplifier with Shutdown 16-TSSOP -40 to 85
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
Renesas Electronics, Corp.
http://
Mitsubishi Electric Sem...
|
| 722A |
Jack Socket; Plug Diameter:0.080; Contact Termination:Solder; Leaded Process Compatible:Yes; Number of Contacts:2; Peak Reflow Compatible (260 C):Yes 12V, 5A, 1.93mm DIAMETER, DC POWER PLUG OR JACK
|
Switchcraft, Inc.
|
| C-001-C-CVSN C-001-C-CRSS C-001-C-CRSF DC-001-B-CR |
30V, 1A, 2.3mm DIAMETER, DC
30V, 3A, 2.3mm DIAMETER, DC
30V, 3A, 2.5mm DIAMETER, DC POWER PLUG OR JACK
30V, 1A, 2.5mm DIAMETER, DC POWER PLUG OR JACK
|
POWER DYNAMICS INC
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| AUM02A48 AUM03M48 AUM03Y48 AUM03F48 AUM03G48 AUM |
10w Ultra Low Profile - 7.7mm
10 Watts Embedded Power
|
Emerson Network Power
ASTEC[Astec America, Inc]
|
| PE1001-5 |
Hermetic Seal Solder Contact With 0.02 Pin Diameter 0.158 Body Diameter And 0.229 Pin Length
|
Pasternack Enterprises, Inc.
|
| SML-LX2723UPGC-TR |
7mm x 6mm SURFACE MOUNT HIGH POWER LED 525nm ULRTA GREEN , TAPE AND REEL
|
List of Unclassifed Manufacturers
ETC
|
| 0050841025 050-84-1025 42021-2C 4202102C |
2.13mm (.084) Diameter MLX Power Crimp Housing Plug, 2 Circuits
2.13mm (.084") Diameter MLX垄芒 Power Crimp Housing Plug, 2 Circuits
|
Molex Electronics Ltd.
|
| 0050841030 050-84-1030 42021-3A |
2.13mm (.084) Diameter MLX Power Crimp Housing Plug, 3 Circuits
2.13mm (.084") Diameter MLX垄芒 Power Crimp Housing Plug, 3 Circuits
|
Molex Electronics Ltd.
|
|
