| PART |
Description |
Maker |
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5364005CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5364003BSW |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V 4米36的DRAM上海药物研究所使用4Mx16
|
Samsung Semiconductor Co., Ltd.
|
| KMM5321204C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| KMM5321200C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
| KMM5368005BSW |
8M x 36 DRAM SIMM(8M x 36 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5322200C2WG KMM5322200C2W |
2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5324004BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5324004CSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM53232000CK KMM53232000CKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM53232004BK KMM53232004BKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
