| PART |
Description |
Maker |
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| JDP2S01S |
UHF~VHF Band RF Attenuator Applications 甚高频波段超高频射频衰减器的应用
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5488A |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
Sanyo Semicon Device
|
| CXA3125N |
All Band TV Tuner IC (VHF-CATV-UHF) 所有带电视调谐器集成电路（甚高频，有线电视，超高频
All Band TV Tuner IC(VHF-CATV-UHF)
|
Sony, Corp.
SONY[Sony Corporation]
|
| EC3H05B 1225 |
NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistor
From old datasheet system
VHF to UHF Wide-Band Low-Noise Amplifier Applications 甚高频到超高频宽带低噪声放大器的应用
|
Sanyo Semicon Device
Sanyo Electric Co., Ltd.
|
| BB148T/R |
VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
NXP SEMICONDUCTORS
|
| 2SC5772 2SC5772FR-TL-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
| 1N5692AB 1N5688AB |
VHF-UHF BAND, 56 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-14
VHF-UHF BAND, 27 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| ZC703B ZC703C |
VHF-UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1N5446A 1N5468A 1N5475ACHIP |
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| MV1630C |
VHF-UHF BAND, 18 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 2SC5758 2SC5758WF-TR-E |
Silicon NPN Epitaxial VHF / UHF Wide band amplifier
|
http://
Renesas Electronics Corporation
|
|
