| PART |
Description |
Maker |
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| MPS6724RLRAG |
One Watt Darlington Transistors NPN Silicon 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Rectron Semiconductor
|
| 2SD1198 2SD1198A |
Silicon NPN epitaxial planer type darlington 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2N3110 2N3110.MODE4 |
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39
|
SEMELAB LTD
Seme LAB
|
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| FMMT491 FMMT491TA |
Medium power NPN transistor in SOT23
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-23, 3 PIN
|
Diodes Incorporated
Diodes, Inc.
|
| BC639-16 BC637 |
High Current Transistor NPN Silicon(硅NPN大电流晶体管) 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ON Semiconductor
|
| 2SC1384 2SC1383 |
Silicon NPN epitaxial planer type(For low-frequency power amplification and driver amplification) 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| NTE128P NTE129P |
1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO237
1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO237
Silicon Complementary Transistors General Purpose Amp
|
NTE[NTE Electronics]
|
| 2SD1616AG-X-G03-K 2SD1616G-X-G03-K 2SD1616A-X-G03- |
NPN EPITAXIAL SILICON TRANSISTOR 1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN EPITAXIAL SILICON TRANSISTOR 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| IXTH14N100 |
Discrete MOSFETs: Standard N-channel Types
MegaMOSTMFET 14 A, 1000 V, 0.82 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
|
