PART |
Description |
Maker |
2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁| 10A条一(c)|3 TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
BUD42D-D BUD42D-1 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
BU941ZT BU941ZTFP 5288 BUB941ZT BUB941ZTT4 |
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-263 From old datasheet system HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] http://
|
ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 15A条(c)的|园区 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五(巴西)总裁| 300mA的一(c)|
|
NXP Semiconductors N.V.
|
MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五(巴西)总裁|芯片 TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁|芯片 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|芯片 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC Central Semiconductor, Corp. Cypress Semiconductor, Corp.
|
DTL1636 DTL1658 DTL1638 DTL1644 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | TO-210AE TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1A I(C) | TO-66 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1A I(C) | TO-3 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-66
|
Shindengen Electric Manufacturing Co., Ltd.
|
2SC4295M 2SC4295MN 2SC4295MP 2SC4295MQ 2SD2279P 2S |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SC-71 晶体管|晶体管|叩| 50V五(巴西)总裁| 200mA的一(c)|律师- 71 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SIP 晶体管|晶体管|叩| 50V五(巴西)总裁| 200mA的一(c)|园区 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 50V五(巴西)总裁| 5A条一(c)|园区 晶体管|晶体管|进步党| 50V五(巴西)总裁| 150毫安一(c)|园区 晶体管|晶体管|叩| 50V五(巴西)总裁| 5A条一(c)|律师- 71 5个引#181;带看门狗和手动复位的P监控电路 晶体管|晶体管|叩| 25V的五(巴西)总裁| 50mA的一(c)|园区 晶体管|晶体管|叩| 20V的五(巴西)总裁| 1A条一(c)|律师- 71 晶体管|晶体管|叩| 400V五(巴西)总裁| 100mA的一(c)|律师- 71 晶体管|晶体管|叩| 25V的五(巴西)总裁| 200mA的一(c)|律师- 71 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SIP TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 3A I(C) | SIP TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SC-71 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SIP TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SIP 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SC-71 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP TRANSISTOR|BJT|NPN|400VV(BR)CEO|100MAI(C)|SC-71
|
Power Integrations, Inc.
|
NE32740A NE32708 NE32740B NE32702 NE32700 |
TRANSISTOR | BJT | NPN | 50MA I(C) | MACRO-X TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | CHIP 晶体管|晶体管|叩| 12V的五(巴西)总裁| 50mA的一(c)|芯片
|
Panasonic, Corp.
|
BC413B BF479S |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 晶体管|晶体管|叩| 30V的五(巴西)总裁| 100mA的一(c)|2 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | MACRO-T TRANSISTOR|BJT|NPN|30VV(BR)CEO|100MAI(C)|TO-92
|
Vectron International, Inc.
|