| PART |
Description |
Maker |
| AT49LV1614-90TC AT49LV1614T-90TC |
90NS, TSOP, COM TEMP(FLASH)
1M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
ATMEL CORP
|
| AM7203-25DC AM7203-25JC AM7203-25PC AM7203-25RC AM |
x9 Asynchronous FIFO X9热卖异步FIFO
55NS, TSOP, IND TEMP(FLASH) X9热卖异步FIFO
70NS, VSOP,IND TEMP(FLASH) X9热卖异步FIFO
1M (64K X 16), 5V FLASH, COM TEMP(FLASH) X9热卖异步FIFO
55NS, PLCC, TOP BOOT, IND TEMP,GREEN PKG(FLASH)
90NS, TSOP, IND TEMP(FLASH)
70NS, TSOP, COM TEMP(FLASH)
55NS, VSOP, IND TEMP, GREEN(FLASH)
70NS, PLCC, IND TEMP(FLASH)
55NS, TSOP, IND TEMP, GREEN(FLASH)
x9AsynchronousFIFO
|
Rochester Electronics, LLC
Ecliptek, Corp.
|
| PUMA67S16000M-025 PUMA2S16000I-45 PUMA67S16000I-45 |
150NS, PLCC, COM TEMP(FLASH)
15NS, 44 PLCC, COM TEMP(EPLD)
30MHZ, 3.3V, 8 LAP, COM TEMP(FPGA)
20NS, 44 PLCC, COM TEMP(EPLD)
150NS, TSOP, IND TEMP(FLASH)
20NS, 44 TQFP, IND TEMP(EPLD)
120NS, SOIC, IND TEMP(EEPROM)
70NS, TSOP, IND TEMP(EEPROM)
15NS, 68 PLCC, IND TEMP(EPLD)
25NS, 68 PLCC, IND TEMP(EPLD)
30MHZ, 32 TQFP, COM TEMP(FPGA)
120NS, PDIP, IND TEMP(EEPROM)
32 MCROCELL CPLD 1.8V ISP TQFP IND GREEN(EPLD)
x32 SRAM Module X32号的SRAM模块
90NS, TSOP, IND TEMP(EEPROM) X32号的SRAM模块
120NS, PLCC, IND TEMP(EEPROM)
|
DB Lectro, Inc.
TE Connectivity, Ltd.
|
| AM29F032B-75 AM29F032B-90EF |
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:32Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 4M X 8 FLASH 5V PROM, 90 ns, PDSO40
|
Spansion, Inc.
|
| ZRL-2150 |
IC FLASH 8MX16 90NS TSOP 85
LOW NOISE AMPLIFIER 50з 950 to 2150 MHz
LOW NOISE AMPLIFIER 50 950 to 2150 MHz
|
MINI[Mini-Circuits]
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 15KRA10 |
FRD - 1.5A 100V 90ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| S29GL032M10BBIR10 S29GL032M10BBIR12 S29GL032M10BBI |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142-EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
|
Spansion, Inc.
|
| S29GL128M10TAIR10 S29GL128M10TAFR93 S29GL128M10TAF |
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 TSOP-56
8M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
8M X 16 FLASH 3V PROM, 100 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
16M X 16 FLASH 3V PROM, 110 ns, PBGA64 18 X 12 MM, FORTIFIED, BGA-64
256 Megabit, 3.0 Volt-only Page Mode Flash Memory 16M X 16 FLASH 3V PROM, 110 ns, PBGA64
4M X 16 FLASH 3V PROM, 90 ns, PDSO56
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
2M X 16 FLASH 3V PROM, 110 ns, PBGA64
|
Spansion, Inc.
SPANSION LLC
|
| MU9C1480L-12DC MU9C1480L-12DI MU9C1480L-70DC MU9C1 |
90ns 3.3V 8192 x 64 MU9C1480A/L LANCAM
70ns 3.3V 8192 x 64 MU9C1480A/L LANCAM
120ns 3.3V 8192 x 64 MU9C1480A/L LANCAM
90ns 5.0V 8192 x 64 MU9C1480A/L LANCAM
70ns 5.0V 8192 x 64 MU9C1480A/L LANCAM
120ns 5.0V 8192 x 64 MU9C1480A/L LANCAM
The 1024 x 64-bit LANCAM facilitates numerous 1024 x 64-bit CMOS content-addressable memory (CAM)
Content Addressable Memory 内容可寻址存储
|
MUSIC Semiconductors
List of Unclassifed Manufacturers
Atmel, Corp.
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