PART |
Description |
Maker |
AS8ER128K32Q-250/XT AS8ER128K32Q-250/883C AS8ER128 |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY 128K X 32 EEPROM 5V MODULE, 250 ns, CQFP68
|
Austin Semiconductor, Inc
|
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http:// Maxwell Technologies, Inc
|
W27E010 W27E010P-55 W27E010P-45 W27E010P-90 W27E01 |
128Kx8 EEPROM 128K X 8 EEPROM 12V, 45 ns, PDIP32 128Kx8 EEPROM 128K X 8 EEPROM 12V, 45 ns, PQCC32 From old datasheet system 128K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics, Corp. Winbond Electronics Corp
|
SST29LE010-150-4C-NHE CAT25C33Y20 GLS29EE512-70-4I |
EEPROM 128K X 8 150ns EEPROM (4kx8) 32K 2.5-6.0 EEPROM 64K X 8 70ns EEPROM 128K X 8 70ns 16Kb Add-Only Memory 16K X 1 OTPROM, PDSO6
|
Silicon Storage Technology, Inc. Advanced Semiconductor, Inc. Maxim Integrated Products
|
AT28C010-12TU AT28C010E-15JU |
120NS, TSOP, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 120 ns, PDSO32 150NS, PLCC, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 150 ns, PQCC32
|
Atmel, Corp.
|
WE128K32-XH1X WE128K32-XG2TX WE128K32NP-200H1Q WE1 |
EEPROM MCP 128K X 32 EEPROM 5V MODULE, 200 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 1.075 x 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 128K X 32 EEPROM 5V MODULE, 150 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 128K X 32 EEPROM 5V MODULE, 140 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66 128K X 32 EEPROM 5V MODULE, 250 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp. White Electronic Designs, Corp.
|
SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8)页模式的EEPROM 1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
24AA128-I_MS 24AA128-I_P 24AA128-I_ST 24AA12809 24 |
16K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 128K I2C?/a> CMOS Serial EEPROM 128K I2C CMOS Serial EEPROM 128K I2C垄芒 CMOS Serial EEPROM
|
Microchip Technology
|
24WC128 CAT24WC128 CA24WC128PI-1.8TE13 CA24WC128KI |
128K-Bit I2C Serial CMOS E2PROM 128K-BitI2CSerialCMOSE2PROM 1.8V-6.0V 128K-bit IIC serial CMOS EEPROM 2.5V-6.0V 128K-bit IIC serial CMOS EEPROM
|
CatalystSemiconductor CATALYST[Catalyst Semiconductor]
|
AS8ER128K32_03 AS8ER128K32 AS8ER128K32Q-150_883C A |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
|
AUSTIN[Austin Semiconductor]
|
CAT24WC129 CAT24WC129KA-1.8TE13 CAT24WC129KA-TE13 |
128K-Bit I2C Serial CMOS E2PROM 1.8V-6.0V 128K-bit IIC serial CMOS EEPROM 2.5V-6.0V 128K-bit IIC serial CMOS EEPROM 3.0V-5.5V 128K-bit IIC serial CMOS EEPROM
|
CATALYST[Catalyst Semiconductor]
|