| PART |
Description |
Maker |
| HB54A2568FM-A75B HB54A2569FM-A75B HB54A2569FM-10B |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
256MB Unbuffered DDR SDRAM DIMM
|
ELPIDA MEMORY INC
|
| HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
| V827332K04SATG-A0 |
32M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
MOSEL-VITELIC
|
| MT5HTF3272KY-40EXX |
32M X 72 DDR DRAM MODULE, 0.9 ns, ZMA244
|
|
| HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification
|
Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470T3354EZ3-LD5 |
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Samsung Semiconductor Co., Ltd.
|
| HYI25D512160DE-6 HYI25D512160DT-6 HYI25D512160DF-6 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
32M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
32M X 16 DDR DRAM, 0.7 ns, PBGA60 PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM
32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
| HYMD232646A8J-D4 HYMD232646A8J-D43 HYMD232646A8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15 |
64M X 4 DDR DRAM, 1.5 ns, PBGA78
32M X 8 DDR DRAM, 1.87 ns, PBGA78
32M X 8 DDR DRAM, 1.5 ns, PBGA78
|
|
|
