| PART |
Description |
Maker |
| PC8260NBSP PC8260 |
The versatile PC8260 PowerQUICC II is particularly useful in communication and networking applicatio
From old datasheet system
|
Atmel corp
|
| EVB3020A-IFBD LUCW3020CCS-DB W3020 |
GSM Multiband RF Transceiver
|
Agere Systems
|
| MC13760 |
GSM/DCS/TDMA/AMPS Multi-Protocol Transceiver
|
Motorola, Inc
|
| UAA3587 |
Complete, single-package GSM/GPRS/EDGE RF transceiver
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| CXM3000GA |
Wireless Gsm900/1800/1900 Dual/triple Band Rx/tx Gsm/gprs Transceiver Module
|
Sony Electronics
|
| MRF18030ASR3 MRF18030ALSR3 MRF18030ALR3 |
GSM/GSM EDGE 1.80–1.88 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MRF18030BLSR3 MRF18030BSR3 MRF18030BR3 MRF18030BLR |
GSM/GSM EDGE 1.93–1.99 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| MW4IC915MBR1 MW4IC915GMBR1 MW4IC915 |
MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - CDMA技术。的W - CDMA860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器
|
飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| SKY77325 |
iPAC PAM for Quad-Band GSM / GPRS
iPACPAM for Quad-Band GSM / GPRS
IPAC⒙ PAM FOR QUAD-BAND GSM / GPRS
|
Skyworks Solutions Inc.
|
| AD6526 AD6526-15 |
GSM/GPRS Digital Baseband Processor
GSM/GPRS SoftFone Baseband Processor
|
AD[Analog Devices]
|
