PART |
Description |
Maker |
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
BU-61585P0-12 BU-61580P0-12 BU-61585P5-12 BU-61580 |
2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CPGA70 1.900 X 1.900 INCH, LOW PROFILE, CERAMIC, PGA-70 2 CHANNEL(S), 1M bps, MIL-STD-1553 CONTROLLER, CDSO70
|
Data Device, Corp. Murata Manufacturing Co., Ltd. DATA DEVICE CORP
|
MRF897D MRF897 |
2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR MRF897 900 MHz, 30 W, 24 V RF Power Transistor - Archived
|
FREESCALE SEMICONDUCTOR INC Motorola
|
TMP93PW44A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP93PW32 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP93CU76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
2SK1942-01 |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
FQP6N90C FQPF6N90CT |
N-Channel QFET? MOSFET 900 V, 6.0 A, 2.3 Ω
|
Fairchild Semiconductor
|
FQA8N90C-F109 |
N-Channel QFET? MOSFET 900 V, 8 A, 1.9 Ω
|
Fairchild Semiconductor
|
2SK2700 |
3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
9N90 |
900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
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