PART |
Description |
Maker |
R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 2200 A, 800 V, SILICON, RECTIFIER DIODE 2200 A, 600 V, SILICON, RECTIFIER DIODE 2200 A, 400 V, SILICON, RECTIFIER DIODE 450 A, 150 V, SILICON, RECTIFIER DIODE 550 A, 50 V, SILICON, RECTIFIER DIODE 550 A, 150 V, SILICON, RECTIFIER DIODE 2500 A, 1300 V, SILICON, RECTIFIER DIODE 300 A, 900 V, SILICON, RECTIFIER DIODE 1800 A, 200 V, SILICON, RECTIFIER DIODE 1200 A, 3100 V, SILICON, RECTIFIER DIODE 2000 A, 2300 V, SILICON, RECTIFIER DIODE 3600 A, 2300 V, SILICON, RECTIFIER DIODE 100 A, 150 V, SILICON, RECTIFIER DIODE
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POWEREX INC
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CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8 80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5 60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5 True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial 80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
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Central Semiconductor, Corp. CENTRAL SEMICONDUCTOR CORP
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IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE 16 A, 800 V, SILICON, RECTIFIER DIODE 16 A, 400 V, SILICON, RECTIFIER DIODE 25 A, 200 V, SILICON, RECTIFIER DIODE 25 A, 1000 V, SILICON, RECTIFIER DIODE 16 A, 1200 V, SILICON, RECTIFIER DIODE 16 A, 100 V, SILICON, RECTIFIER DIODE
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TT electronics Semelab, Ltd.
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2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 0.1 A, SILICON, SIGNAL DIODE SILICON, PIN DIODE UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
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PANASONIC CORP
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EFM301B EFM302B EFM303B EFM304B EFM305B EFM306B EF |
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AA SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Amperes 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA
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RECTRON LTD Rectron Semiconductor
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CPR2-040TRLEADFREE CPR2-010TRLEADFREE CPR2-120TRLE |
2 A, 400 V, SILICON, RECTIFIER DIODE 2 A, 100 V, SILICON, RECTIFIER DIODE 2 A, 1200 V, SILICON, RECTIFIER DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Central Semiconductor, Corp. CENTRAL SEMICONDUCTOR CORP
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BZG03C BZG03C120 BZG03C13 BZG03C51 BZG03C15 BZG03C |
Silicon Z-Diodes Silicon ZDiodes From old datasheet system Silicon Z-Diode(稳压应用电压范围10-270V的齐纳二极管)
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Vishay Telefunken VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
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2N6346A 2N6347A 2N6345A 2N6343A 2N6348A 2N6342A 2N |
12-A silicon triac. 200 V. 12-A silicon triac. 400 V. 12-A silicon triac. 800 V. 12-A silicon triac. 600 V.
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General Electric Solid State
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BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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BYP35A0506 BYP35A05 BYP35A1 BYP35A2 BYP35A3 BYP35A |
35 A, 300 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 50 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 100 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 600 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 200 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 35 A, 400 V, SILICON, RECTIFIER DIODE METAL PACKAGE-1 Silicon Press-Fit-Diodes
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Semikron International
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