| PART |
Description |
Maker |
| 1N4942GP11 1N4948GP-AP |
1 Amp Glass Passivated Fast Recovery Rectifier 200 - 1000 Volts
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 ROHS COMPLIANT, PLASTIC PACKAGE-2
|
Micro Commercial Components, Corp.
|
| BYM11-50 BYM11-800 BYM11-600 BYM11-400 BYM11-100 B |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
Surface Mount Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A
|
Vishay Beyschlag
|
| J4248 SV4247US SV4248US SV4249US |
1 A, 800 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 1000 V, SILICON, SIGNAL DIODE
|
SENSITRON SEMICONDUCTOR
|
| BYM11-600-E3/96 BYM11-600HE3/96 RGL41M-E3/96 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB ROHS COMPLIANT, PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| 1N4007GPP 1N4006GPP |
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1.0 AMP, 50 THRU 1000 VOLTS 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp.
Vishay Intertechnology, Inc.
|
| BC637L34Z BC637D26Z |
NPN Epitaxial Silicon Transistor 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| 1N4007L |
1 A, 1000 V, SILICON, SIGNAL DIODE
|
VISHAY INTERTECHNOLOGY INC
|
| HFM108 HFM105 HFM101 HFM104 HFM102 HFM103 HFM106 H |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
|
RECTRON LTD
RECTRON[Rectron Semiconductor]
|
| BYM10-1000/26 BYM10-600/46 BYM10-100/26 GL41T-HE3 |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1300 V, SILICON, SIGNAL DIODE, DO-213AB
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| BYV26D-5410/4 BYV26E-5410/4 |
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AP
|
Vishay Beyschlag
|
| SGB35UFSMSS SGB35UFSMSTX SGB35UFSMSTXV SGB10UFSMS |
60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
0.06 A, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
0.1 A, SILICON, SIGNAL DIODE
SILICON, PIN DIODE
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
|
