PART |
Description |
Maker |
HYI18T256160BF-25F HYI18T256160BC-25F HYB18T256160 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84 GREEN, PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.4 ns, PBGA84 PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.45 ns, PBGA84 16M X 16 DDR DRAM, 0.5 ns, PBGA84 64M X 4 DDR DRAM, 0.45 ns, PBGA60
|
Qimonda AG
|
K4X51323PC-7EC30 K4X51323PC-8EC30 |
16M X 32 DDR DRAM, 6 ns, PBGA90 FBGA-90 16M X 32 DDR DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
|
Applied Micro Circuits, Corp.
|
AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
IS43R16160A-75T |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INTEGRATED SILICON SOLUTION INC
|
HYB18T256160AF-2.5 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84
|
QIMONDA AG
|
HY5DU28822LT-K |
16M X 8 DDR DRAM, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
MT8VDDT1664AG-403A1 |
16M X 64 DDR DRAM MODULE, 0.6 ns, DMA184
|
|
MT8VDDT1664HDG-335XX |
16M X 64 DDR DRAM MODULE, 0.75 ns, ZMA200
|
|
W9412FADA-75 |
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
WINBOND ELECTRONICS CORP
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
|