PART |
Description |
Maker |
IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBX55N300 |
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBT10N170 IXBH10N170 |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
AGB3307 AGB3307S24Q1 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... Gain Block Amplifiers 50-ohm High Linearity Low Noise Wideband Gain Block
|
Anadigics Inc ANADIGICS[ANADIGICS, Inc]
|
ADA4898-1 ADA4898-1YRDZ ADA4898-1YRDZ-R7 ADA4898-1 |
High Voltage, Low Noise, Low Distortion, Unity Gain Stable, High Speed Op Amp
|
Analog Devices
|
BUL42D BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability 4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
AS8525 AS8525-AQFP AS8525-AQFM |
LIN Transceiver with Voltage Regulators, Programmable Gain High Side Amplifier, and Voltage Attenuator
|
ams AG
|
BC369 C62702-C748 |
From old datasheet system PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BC337 BC337-25 BC337-40 Q62702-C314-V3 BC337-16 BC |
Si-Epitaxial PlanarTransistors NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) NPN硅晶体管自动对焦(高电流增益高集电极电流低集电极发射极饱和电压)
|
Siemens Semiconductor G... Diotec Elektronische Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|