PART |
Description |
Maker |
CD296KC |
EC Snap-In 105°C Long Lifetime 5.000h High Ripple Currents(Snap-In)
|
Jianghai Europe GmbH
|
CD29HQH |
EC Snap-In 105°C Long Lifetime 5.000h Highest Ripple Currents Miniaturized(Snap-In)
|
Jianghai Europe GmbH
|
HCP |
PC SMD 105°C Very Low ESR High Ripple Current 2.000h Lifetime(Polymer SMD)
|
Jianghai Europe GmbH
|
HPM |
PC SMD 105∑C Ultra Low ESR High Ripple Current 2.000h Miniaturized(Polymer SMD)
|
Jianghai Europe GmbH
|
381LQ472M080A022 381LQ393M025A452 381LQ393M025K052 |
105 C Compact High-Ripple Snap-in
|
etc
|
K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C8909 |
288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范 Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk JT 55C 55#22M PIN PLUG JT 8C 8#16 PIN PLUG Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes JT 55C 55#22 SKT PLUG
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
450C472M300BF8 450C601M400AH8 450C801M300AH8 450C1 |
Ultra-Ripple, Long-life, Inverter Grade, Radial Leaded The Ultimate in Ripple for Plug-in
|
Cornell Dubilier Electronics Cornell Dubilier Electronic... Cornell Dubilier Electr...
|
550155U6R3DG2D 550434U6R3CC2D 550114U016BB2B 55017 |
High Ripple, Long Life, Computer Grade
|
Cornell Dubilier Electr...
|
CD299PG |
EC Snap-In 105∑C Longest Lifetime 9.000h High Ripple Currents Miniaturized(Snap-In)
|
JIANGHAI[Jianghai Europe GmbH]
|
K4C561638C-TCDA K4C560838C-TCDA K4C561638C-TCD4000 |
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 220uF; Voltage: 200V; Case Size: 18x31 mm; Packaging: Bulk Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 47uF; Voltage: 200V; Case Size: 12.5x20 mm; Packaging: Bulk 256Mb的网络内 256Mb Network-DRAM 256Mb的网络内 32M X 8 SYNCHRONOUS DRAM, 0.75 ns, PDSO66 32M X 8 SYNCHRONOUS DRAM, 0.65 ns, PDSO66
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|