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K7N803601M-HC13 - 256K X 36 ZBT SRAM, 4.2 ns, PBGA119 256K X 36 ZBT SRAM, 3.8 ns, PBGA119 256K X 36 ZBT SRAM, 5 ns, PBGA119

K7N803601M-HC13_6617092.PDF Datasheet


 Full text search : 256K X 36 ZBT SRAM, 4.2 ns, PBGA119 256K X 36 ZBT SRAM, 3.8 ns, PBGA119 256K X 36 ZBT SRAM, 5 ns, PBGA119
 Product Description search : 256K X 36 ZBT SRAM, 4.2 ns, PBGA119 256K X 36 ZBT SRAM, 3.8 ns, PBGA119 256K X 36 ZBT SRAM, 5 ns, PBGA119


 Related Part Number
PART Description Maker
IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
Integrated Device Technology, Inc.
IDT
IS61NP25618-100B IS61NP25618-100B2 IS61NP25618-100 256K X 18 ZBT SRAM, 5 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 5 ns, PQFP100
MERITEK Electronics, Corp.
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
AS7C33256NTF18B AS7C33256NTF18B.V1.3 AS7C33256NTF1 3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD 256K X 18 ZBT SRAM, 8 ns, PQFP100
3.3V 256K x 18 Flowthrough Synchronous SRAM with NTD 256K X 18 ZBT SRAM, 7.5 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 3.3V
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
IS61NP25618-133B2 IS61NP25618-133B2I IS61NP25618-1 256K X 18 ZBT SRAM, 4.2 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 3.8 ns, PBGA119 PLASTIC, BGA-119
256K X 18 ZBT SRAM, 5 ns, PQFP100
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
AS7C33256NTD18B AS7C33256NTD18B.V.1.5 AS7C33256NTD 3.3V 256K x 8 Pipelined SRAM with NTD 256K X 18 ZBT SRAM, 3 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 3.3V
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
IDT71V3557S75PF IDT71V3557S85PF IDT71V3557S80PF ID 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K的3656 × 18.3V的同步ZBT SRAM.3V的I / O的脉冲计数器,流量,通过输出
128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs 128K X 36 ZBT SRAM, 7.5 ns, PBGA119
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
IS61NVF51218A-6.5TQI IS61NLF51218A-6.5B3 IS61NLF51 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PQFP100
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA165
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA119
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
CY7C1353-40AC CY7C1353-66AC 256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 14 ns, PQFP100
256Kx18 Flow-Through SRAM with NoBL Architecture 256K X 18 ZBT SRAM, 11 ns, PQFP100
Cypress Semiconductor, Corp.
GS882ZV18BB-200 GS882ZV36BB-200 GS882ZV18BB-300 GS 9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 4.5 ns, PBGA119
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 5 ns, PBGA119
9Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 36 ZBT SRAM, 5 ns, PBGA165
9Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 18 ZBT SRAM, 6.5 ns, PBGA119
GSI Technology, Inc.
http://
IS61NP25636-100BI 256K X 36 ZBT SRAM, 5 ns, PBGA119
INTEGRATED SILICON SOLUTION INC
71V2559S85BG 71V2559S85BGG 256K X 18 ZBT SRAM, 8.5 ns, PBGA119
INTEGRATED DEVICE TECHNOLOGY INC
 
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