| PART |
Description |
Maker |
| EH8008ZI EH8006ZI EH8004ZI EH8012ZI EH10002ZI EH10 |
3 PHASE BRIDGE MODULES 3 PHASE, 80 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
3 PHASE BRIDGE MODULES 3 PHASE, 80 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
3 PHASE BRIDGE MODULES 3 PHASE, 100 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
TV 13C 13#22D SKT WALL RECP
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| GBJ25005-BP GBJ2504-BP GBJ2510-BP GBJ2502-BP GBJ25 |
RECT BRIDGE GPP 25A 50V GBJ 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 400V GBJ 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 1000V GBJ 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 200V GBJ 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
25 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| 1210E 1206E 1202E 1206FE 1206UFE |
200 V - 1,000 V Single Phase Bridge 3.0 A Forward Current 70 ns - 3000 ns Recovery Time 3 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| BPC50-02 GBPC50 GBPC50-04 GBPC50-005 GBPC50-01 |
50 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
High Current 40, 50 AMPS. Single Phase Glass Passivated Bridge Rectifiers
|
Taiwan Semiconductor Compan...
Taiwan Semiconductor Co...
|
| 1102E 1110FE 1106FE 1106UFE 1102UFE 1110UFE |
200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1.4 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| 1506A 1510A 1506FA 1510FA 1502FA 1506UFA 1502UFA |
200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time 22 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| SBU6D |
6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
|
| DF02MA-E3 VISHAYSEMICONDUCTORS-DF01MA-E3 |
1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| KBPC50-02 |
50 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
