| PART |
Description |
Maker |
| BZX55C BZX55C15 BZX55C43 BZX55C3V9 BZX55C7V5 BZX55 |
1.25A SCRS 硅外延平面ZvDiodes0.93十一
0.8 A sensitive gate SCRs 硅外延平面ZvDiodes0.93十一
16A TRIACS 硅外延平面ZvDiodes0.93十一
4A SCRS
Silicon Epitaxial Planar Z-Diodes
|
Vishay Intertechnology, Inc.
Electronics Industry Public Company Limited
Fairchild Semiconductor, Corp.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| JMC150-16 |
Chip - double mesa SCRs of reverse blocking high-voltage
|
JIEJIE MICROELECTRONICS...
|
| CAT1162J-42 CAT1162J-45 CAT1162J-25 CAT1161J-28 CA |
0.8A TRIACS
1 A triacs
1.25A SCRS
"Omnifet": fully autoprotected Power MOSFET
Omnifet: fully autoprotected Power MOSFET
Omnifet II: fully autoprotected Power MOSFET
4A SCRS
OMNIFET FULLY AUTOPROTECTED POWER MOSFET
4 A triacs
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
I2C Serial EEPROM with Supervisory Features I2C串行EEPROM，带有监控功
HIGH SIDE DRIVER I2C串行EEPROM，带有监控功
|
ITT, Corp.
Rochester Electronics, LLC
|
| C1206C225K3NACTU |
Ceramic, 150C-(CxxxxC), 2.2 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| C1206C105K3NACTU |
Ceramic, 150C-(CxxxxC), 1 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| HXL1225 HML1225 |
0.8A 300.380 VOLTAGE SCRS IGT<200uA
28.37 Kbytes
0.8A 300.380 VOLTAGE SCRS IGT<200uA
|
Hi-Sincerity Mocroelect...
Hi-Sincerity Mocroelectronics
Hi-Sincerity Microelectronics
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| ENC102D-10A ENC112D-10A ENC820D-10A ENC220D-10B EN |
±15kV ESD Protected, 5V, Low Power, High Speed and Slew Rate Limited, Full Duplex, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch; Temperature Range: -40°C to 85°C; Package: 16-QFN
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN
STD MOV
Dual LDO with Low Noise, Very High PSRR, and Low IQ; Temperature Range: -40°C to 85°C; Package: 10-DFN 性病检验手
|
Central Semiconductor, Corp.
|
| SB1H100-E3_54 SB1H100-E3_73 SB1H100 SB1H100HE3_54 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| SB3H100-E3_54 SB3H100-E3_73 SB3H90 SB3H9008 SB3H10 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
