| PART |
Description |
Maker |
| K7R321884M K7R323684M K7R323684M-FC16 K7R321884M-F |
1Mx36 & 2Mx18 QDRTM II b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7A323630C K7A321830C K7A321830C-PC20 K7A321830C-P |
1M X 36 CACHE SRAM, 3.1 ns, PQFP100
1Mx36 and 2Mx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7R323684C K7R320984C K7R321884C |
1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM
|
Samsung semiconductor
|
| IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM
1M X 36 ZBT SRAM, 3.5 ns, PQFP100
1M X 36 ZBT SRAM, 3.5 ns, PBGA165
1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
| K7R323682C-FCI20 K7R323682C-FCI25 |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
Samsung semiconductor
|
| K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36
512Kx36 & 1Mx18 QDR II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61QDP2B41M36A2 IS61QDP2B41M36A1 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
| IS61QDPB21M36A1 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7M321835C-PC65 K7M321835C-PI65 K7M321835C-QC65 K7 |
1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung semiconductor
|
