| PART |
Description |
Maker |
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| AM82731-012 2767 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AM83135-050 4914 |
Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:16 x 30; Jacket Color:Orange; Approval Bodies:UL, CSA; Approval Categories:UL AWM Styles 1007, 1565; CSA Types TR-64, TRSR-64; JQA-F; Passes VW-1 Flame Test RoHS Compliant: Yes
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| PH3134-9L PTI3134-9L |
Radar Pulsed Power Transistor/ SW/ 300ms Pulse/ 10% Duty 3.1 - 3.4 GHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.1A I(C)
Radar Pulsed Power Transistor, 9W, 300us Pulse, 10% Duty 3.1 - 3.4 GHz
|
Tyco Electronics
|
| 1617-35 |
COMPUTER PRODUCT
35 Watts/ 28 Volts/ Pulsed Radar 1540 - 1660 MHz
35 Watts 28 Volts Pulsed Radar 1540 - 1660 MHz
35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz
|
Electronic Theatre Controls, Inc.
ETC[ETC]
GHz Technology
|
| AM1214-175 2705 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| PH2931-I3 PH2931-135S |
Rail-to-Rail, Very Low Noise Universal Dual Filter Building Block; Package: SO; No of Pins: 16; Temperature Range: -40°C to 85°C
Radar Pulsed Power Transistor/ 135W/ 20ms Pulse/ 1% Duty 2.9 - 3.1 GHz
Radar Pulsed Power Transistor, 135W, 20ms Pulse, 1% Duty 2.9 - 3.1 GHz 雷达脉冲功率晶体管，135W0毫秒脉冲1％的责任二月九日至三月一日吉
|
Tyco Electronics
|
| AM1214-300 |
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS, RF & MICROWAVE TRANSISTORS
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| MAPR-002729-170M00 |
Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100μsec, 170W
Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100レsec, 170W
|
MACOM[Tyco Electronics]
|
| PH2931-20M |
Radar Pulsed Power Transistor, 20W,100ms Pulse, 10% Duty 2.9-3.1 GHz 雷达脉冲功率晶体管，20瓦，100ms的脉冲，10％的2日至三月一日千兆赫
Radar Pulsed Power Transistor/ 20W/100ms Pulse/ 10% Duty 2.9-3.1 GHz
|
Tyco Electronics
|
| PHI214-25S |
Radar Pulsed Power Transistor/ 25W/ lms Pulse/ 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Power Transistor, 25W, lms Pulse, 10% Duty 1.2 - 1.4 GHz 雷达脉冲功率晶体管，25瓦中，LMS脉冲0％的责任12日至1月四号吉
|
Tyco Electronics
|
