| PART |
Description |
Maker |
| FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTY |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FSGYC260D1 FSGYC260R FSGYC260R3 FSGYC260R4 FN4851 |
From old datasheet system
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSYE913A0R4 FSYE23A0R4 FSYE430D |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil
|
| FSYE430D3 FSYE430R FSYE430R1 FSYE430R3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil
|
| FSYE913A0R FSYE913A0R1 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
|
Intersil
|
| FSPJ264F FSPJ264R FN4894 |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
From old datasheet system
|
Intersil
|
| FSPL234F FSPL234R FN4881 FSPL234R4 |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐射N沟道MOS场效应管)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF
From old datasheet system
|
Intersil Corporation
|
| HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc.
Intersil, Corp.
Intersil Corporation
|
