| PART |
Description |
Maker |
| UPA1520B UPA1520BH |
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
From old datasheet system
TRANSISTOR,MOSFET,ARRAY,N-CHANNEL,30V V(BR)DSS,2A I(D),SIP
|
NEC[NEC]
NEC Electron Devices
NEC Corp.
|
| UPA1520H |
TRANSISTOR,MOSFET,ARRAY,N-CHANNEL,30V V(BR)DSS,2A I(D),SIP
From old datasheet system
|
NEC Electron Devices
|
| LB1212 LB1213 LB1216 LB1214 LB1211 LB1217 LB1215 L |
General Purpose Transistor Array
From old datasheet system
Generral-Purpose Transistor Array
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| IRFG110 JANTX2N7334 JANTX2N7334N JANTXV2N7334 JANT |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | DIP
POWER MOSFET THRU-HOLE (MO-036AB)
100V Quad N-Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
RF Power Field Effect Transistor Array
|
Motorola, Inc
|
| ALD1117 ALD1117DA ALD1117PA ALD1117SA ALD1107 ALD1 |
QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAY
QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY
Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No
|
ALD[Advanced Linear Devices]
Advanced Linear Devices, Inc.
|
| VN0104N6 |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 40V V(BR)DSS | 560MA I(D) | DIP 晶体管| MOSFET的|阵| N沟道| 40V的五（巴西）直| 560MA（丁）|双酯
|
Supertex, Inc.
|
| CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat)
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters
NPN/PNP Transistor Arrays
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
| HIP2060 HIP2060AS1 HIP2060AS2 HIP2060AS3 |
60V/ 10A Half Bridge Power MOSFET Array
60V, 10A Half Bridge Power MOSFET Array
20000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN 10 A, 60 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Intersil Corporation
Intersil, Corp.
|
| HS-6254RH |
NPN Transistor Array, 5 NPN Array, 8GHz, 3.5dB Noise Figure, Rad-Hard
|
Intersil
|
| IXTL13N65 IXTH24N45 IXTL18N50 IXTL24N40 IXTH21N45 |
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-218VAR
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 24A I(D) | TO-254
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 21A I(D) | TO-218VAR 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 21A条（丁）|18VAR
TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | TO-3 晶体管| MOSFET的| N沟道|650V五（巴西）直| 18A条（丁）|
|
IXYS, Corp.
|
| CA3096AE CA3096CE |
TRANSISTOR,BJT,ARRAY,INDEPENDENT,40V V(BR)CEO,50MA I(C),DIP
TRANSISTOR,BJT,ARRAY,INDEPENDENT,24V V(BR)CEO,50MA I(C),DIP
From old datasheet system
|
Intersil Corp
|
|
