PART |
Description |
Maker |
FF600R16KF4 |
Maximum rated values / Electrical properties
|
eupec GmbH
|
CT140 CS140 |
MAXIMUM RATINGS, ELECTRICAL SPECIFICATIONS MAXIMUM RATINGS, ELECTRICAL SPECIFICATIONS
|
Coto Technology
|
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE.
|
Isahaya Electronics Corporation
|
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 SMALL-SIGNAL TRANSISTOR
|
Isahaya Electronics Corporation
|
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 SMALL-SIGNAL TRANSISTOR
|
Isahaya Electronics Corporation
|
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
ISAHAYA[Isahaya Electronics Corporation]
|
2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION
|
Isahaya Electronics Corporation
|
2SC4155 2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
ETC[ETC] Isahaya Electronics Corporation
|
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|