| PART |
Description |
Maker |
| A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only
70ns 20mA 256K x 8bit CMOS 5.0V-only
100ns 20mA 256K x 8bit CMOS 5.0V-only
120ns 20mA 256K x 8bit CMOS 5.0V-only
150ns 20mA 256K x 8bit CMOS 5.0V-only
90ns 20mA 256K x 8bit CMOS 5.0V-only
55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
| 2220GC103KAZ1A 1808AA105JAZ1A 1808GC223JAZ1A 1808H |
CAP 0.01UF 2000V 10% X7R SMD-2220 TR-7 FLEXITERM CAPACITOR, CERAMIC, MULTILAYER, 2000 V, X7R, 0.01 uF, SURFACE MOUNT, 2220
High Voltage MLC Chips FLEXITERM
High Voltage MLC Chips FLEXITERM
|
AVX, Corp.
AVX Corporation
|
| K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4 |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| RP-SDP16G RP-SDP04G RP-SDP08G |
SD Memory Card, Industrial MLC Model
|
Panasonic Semiconductor
|
| CG0603MLC-05E CG0603MLC-12E |
MLC Series Varistor ESD Clamp Protectors
|
BOURNS[Bourns Electronic Solutions]
|
| RMM |
RoHS Compliant SMPS Stacked MLC Capacitors (RMM Style) Extended Range
|
AVX Corporation
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| NMA2103-A2S |
Legacy 100 Hz to 1 MHz
|
Micronetics, Inc.
|
| NZG100-5M |
Legacy 100 Hz to 5 MHz
|
Micronetics, Inc.
|
| NMA2103-A1E |
Legacy 100 Hz to 1 MHz
|
Micronetics, Inc.
|
| NMA2106-A1E |
Legacy 100 Hz to 30 MHz
|
Micronetics, Inc.
|
| NMA2006-A1D |
Legacy 100 Hz to 30 MHz
|
Micronetics, Inc.
|
