| PART |
Description |
Maker |
| KDR367E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| FME-220A |
Schottky Barrier Diode - 90V/100V
100V, 20A Schottky barrier diode in TO220F package
100V/ 20A Schottky barrier diode in TO220F package
100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
|
| KDR331E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR378 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR105S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR701S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
| BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode
DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| CDBURT0230L-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A
Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
