| PART |
Description |
Maker |
| STW21NM60ND STB21NM60ND09 STP21NM60ND STI21NM60ND |
N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
17 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Low input capacitance and gate charge
|
STMicroelectronics
|
| APT43F60B2 APT43F60L |
N-Channel FREDFET
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 45; RDS(on) (Ohms): 0.15; BVDSS (V): 600; 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi Corporation
Microsemi, Corp.
|
| APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| CM400DY-12H |
Dual IGBTMOD 400 Amperes/600 Volts 400 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| CM150DY-12H |
Dual IGBTMOD 150 Amperes/600 Volts 150 A, 600 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| MTB6N60E1_D MTB6N60E1 ON2447 MTB6N60 MTB6N60E1-D |
TMOS POWER FET 6.0 AMPERES 600 VOLTS 6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| APT40N60B2CFG APT40N60B2CF APT40N60LCF APT40N60LCF |
40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Super Junction FREDFET 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
Advanced Power Technology
|
| QIP0640001 |
Asymmetrical Half Bridge IGBT H-Series Hermetic Module (400 Amperes/600 Volts) 400 A, 600 V, N-CHANNEL IGBT
|
Littelfuse, Inc.
POWEREX[Powerex Power Semiconductors]
|
| FCD380N60E |
N-Channel SuperFETII MOSFET 600 V, 10.2 A, 380 m
N-Channel SuperFET? II MOSFET 600 V, 10.2 A, 380 mΩ
|
Fairchild Semiconductor
|
|
