| PART |
Description |
Maker |
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
| IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
| KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| KRF7389 |
Generation V Technology Ultra Low On-Resistance Ultra Low On-Resistance
|
TY Semiconductor Co., Ltd
|
| IRF7304 |
Generation V Technology
|
International Rectifier
|
| IRF7389PBF IRF7389TRPBF IRF7389PBF-15 |
HEXFET Power MOSFET
Generation V Technology
|
IRF
International Rectifier
|
| IRF7343PBF IRF7343TRPBF |
generation v technology
HEXFET Power MOSFET
|
International Rectifier
|
| IKW15N120T2 IKW15N120T208 |
Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology
|
Infineon Technologies AG
|
| SGB30N6009 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB20N60 SGB20N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
