| PART |
Description |
Maker |
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IBM25PPC740L-GB375A2T IBM25PPC740L-GB375A2R IBM25P |
MICROPROCESSOR|32-BIT|CMOS|BGA|360PIN|CERAMIC
MICROPROCESSOR|32-BIT|CMOS|BGA|255PIN|CERAMIC 微处理器| 32位|的CMOS | BGA封装| 255PIN |陶瓷
|
Glenair, Inc.
Vishay Semiconductors
|
| FDZ7296 |
30V N-Channel PowerTrenc BGA MOSFET
30V N-Channel PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IBM25PPC740-DB0M2660 IBM25PPC740-EB0M2660 IBM25PPC |
32-BIT, 266 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
32-BIT, 233 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
32-BIT, 200 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
32-BIT, 300 MHz, RISC PROCESSOR, CBGA360 25 X 25 MM, 1.27 MM PITCH, CERAMIC, BGA-360
|
Japan Aviation Electronics Industry, Ltd.
|
| FDZ294N |
N-Channel 2.5V Specified PowerTrench® BGA MOSFET
N-CHANNEL 2.5 V SPECIFIED POWERTRENCH BGA MOSFET
|
Fairchild Semiconductor
|
| UPD44325084F5-E37-EQ2-A UPD44325084F5-E50-EQ2-A UP |
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
|
NEC, Corp.
|
| IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
| K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
| FW80321M600Q467 FW80321M400Q466 |
600 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
400 MHz, RISC PROCESSOR, PBGA544 PLASTIC, BGA-544
|
Intel, Corp.
|
| W9864G2DB-7 |
BGA SDRAM
|
Winbond Electronics
|
|
