| PART |
Description |
Maker |
| 2CL77 |
5mA 20kV HIGH VOLTAGE DIODES
|
getedz electronics
|
| 2CL2FM |
20kV 100mA HIGH VOLTAGE DIODE
|
getedz electronics
|
| ESJA53-18A |
5mA 18kV HIGH VOLTAGE SILICON RECTIFIER DIODES
|
getedz electronics
|
| 2CL73A |
Plastic Fast Recover High Voltage Rectifier Reverse Voltage 12KV Forward Current 5mA
|
Rugao Dachang Electronics Co., Ltd
|
| 2CL03 |
Plastic Fast Recover High Voltage Rectifier Reverse Voltage 3KV Forward Current 5mA
|
Rugao Dachang Electronics Co., Ltd
|
| 2CL70 |
5mA 6kV HIGH VOLTAGE DIODES
|
getedz electronics
|
| SHV-06 |
6kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| ESJA52-12A |
12kV 5mA HIGH VOLTAGE DIODES
|
getedz electronics
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| BFP181W Q62702-F1501 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
